Features: • Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.)• High forward transfer admittance: |Yfs| = 2.1 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic ...
TPCS8007-H: Features: • Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.)• High forward transfer admittance: |Yfs| = 2.1 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)...
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Characteristic | Symbol | Value | Units | |
Drain-source voltage | VDSS | 200 | V | |
Drain-gate voltage (RGS = 20 k) | VDGR | 200 | V | |
Gate-source voltage | VGSS | ±20 | V | |
Drain current | DC (Note 1) Pulse (Note 1) |
ID IDP |
1.9 7.6 |
A |
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) |
PD PD |
1.5 0.6 |
W | |
Single-pulse avalanche energy(Note3) | EAS | 2.3 | mJ | |
Avalanche current | IAR | 1.9 | A | |
Repetitive avalanche energy (Note2a, Note 4) |
EAR | 0.15 | mJ | |
Channel temperature | Tch | 150 | ||
Storage temperature rangee | TSTG | - 55 to +150 |
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.