Position: Home  > All Categories> Integrated Circuits (ICs) > TPCS8007-H

TPCS8007-H

Features: • Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.)• High forward transfer admittance: |Yfs| = 2.1 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic ...

product image

TPCS8007-H Picture
See larger image
SeekIC No. : 004526238 Detail

TPCS8007-H: Features: • Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.)• High forward transfer admittance: |Yfs| = 2.1 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)&#...

TPCS8007-H Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPCS8007-H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/8/14

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.)
• High forward transfer admittance: |Yfs| = 2.1 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Value Units
Drain-source voltage VDSS 200 V
Drain-gate voltage (RGS = 20 k) VDGR 200 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1)

Pulse (Note 1)		 ID

IDP
 1.9

7.6		 A
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)		 PD

PD		 1.5
0.6		 W
Single-pulse avalanche energy(Note3) EAS 2.3 mJ
Avalanche current IAR 1.9 A
Repetitive avalanche energy
(Note2a, Note 4)		 EAR 0.15 mJ
Channel temperature Tch 150
Storage temperature rangee TSTG - 55 to +150


Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling  recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
Cable Assemblies
CS1W-CN114
XW2Z-500T
Audio Products
HUC1002
WM-64CT
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more