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TPCS8004(TE12L,Q): MOSFET N-Cha 200V 1.3A 0.8Ohms

TPCS8004(TE12L,Q) Data Sheet

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Part Number:: TPCS8004(TE12L,Q)
Mfg:: Toshiba
Supply Ability:: 5000

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What is this?

TPCS8004 evaluate
Features: • Small footprint due to small and thin package• Low drain-source ON resista...
TPCS8006 evaluate
Features: • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)• High forwar...
TPCS8007-H evaluate
Features: • Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.)• High forward tran...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	1.3 A
Resistance Drain-Source RDS (on) :	0.8 Ohms	Configuration :	Single Triple Drain Quad Source
Mounting Style :	SMD/SMT	Package / Case :	TSSOP-8
Packaging :	Reel

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 200 V
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source
Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 0.8 Ohms

Parameters:

Technical/Catalog Information	TPCS8004(TE12L,Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1.3A
Rds On (Max) @ Id, Vgs	800 mOhm @ 600mA, 10V
Input Capacitance (Ciss) @ Vds	380pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 10V
Package / Case	2-3R1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCS8004 TE12L,Q TPCS8004TE12L,Q

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