Features: • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)• High forward transfer admittance: |Yfs| = 1.6 S (typ.)• Low leakage current: IDSS = 100 µA (max) (VDS = 250 V)• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)PinoutSpecifications ...
TPCS8006: Features: • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)• High forward transfer admittance: |Yfs| = 1.6 S (typ.)• Low leakage current: IDSS = 100 µA (max) (V...
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Features: • Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.)• High forward tran...
Characteristics |
Symbol |
Rating |
Unit | |
Drain - source voltage |
VDSS |
250 |
V | |
Drain-gate voltage (RGS = 20 kΩ) |
VDGR |
250 |
V | |
Gate - source voltage |
VGSS |
±20 |
V | |
Drain current | DC (Note 1) |
ID |
1.1 |
A |
Pulse (Note 1) |
IDP |
4.4 | ||
Drain power dissipation (t = 10 s) (Note 2a) |
PD |
1.5 |
W | |
Drain power dissipation (t = 10 s) (Note 2b) |
PD |
0.6 | ||
Single pulse avalanche energy (Note3) |
EAS |
0.07 |
mJ | |
Avalanche current |
IAR |
1.1 |
A | |
Repetitive avalanche energy (Note2a, Note 4) |
EAR |
0.15 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature |
Tstg |
−55~150 |