TPCS8006 Selling Leads, Price trend, TPCS8006 DataSheet download, circuit diagram from SeekIC.com

Features: • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)• High forward transfer admittance: |Yfs| = 1.6 S (typ.)• Low leakage current: IDSS = 100 µA (max) (VDS = 250 V)• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)PinoutSpecifications ...

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SeekIC No. : 004526237 Detail

TPCS8006: Features: • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)• High forward transfer admittance: |Yfs| = 1.6 S (typ.)• Low leakage current: IDSS = 100 µA (max) (V...

TPCS8006 Data Sheet

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Part Number:: TPCS8006
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

• Low drain-source ON resistance: R_{DS (ON)} = 0.8 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 1.6 S (typ.)
• Low leakage current: I_DSS= 100 µA (max) (V_DS = 250 V)
• Enhancement model: V_th = 1.5~3.5 V (V_DS = 10 V, I_D = 1 mA)

Pinout

Connection Diagram

Specifications

Characteristics		Symbol	Rating	Unit
Drain - source voltage		V_DSS	250	V
Drain-gate voltage (R_GS = 20 kΩ)		V_DGR	250	V
Gate - source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	I_D	1.1	A
Drain current	Pulse (Note 1)	I_DP	4.4	A
Drain power dissipation (t = 10 s) (Note 2a)		P_D	1.5	W
Drain power dissipation (t = 10 s) (Note 2b)		P_D	0.6	W
Single pulse avalanche energy (Note3)		E_AS	0.07	mJ
Avalanche current		I_AR	1.1	A
Repetitive avalanche energy (Note2a, Note 4)		E_AR	0.15	mJ
Channel temperature		T_ch	150
Storage temperature		T_stg	−55~150

Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.

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TPCS8006

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