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TPCS8006

Features: • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)• High forward transfer admittance: |Yfs| = 1.6 S (typ.)• Low leakage current: IDSS = 100 µA (max) (VDS = 250 V)• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)PinoutSpecifications ...

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TPCS8006: Features: • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)• High forward transfer admittance: |Yfs| = 1.6 S (typ.)• Low leakage current: IDSS = 100 µA (max) (V...

TPCS8006 Data Sheet

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Part Number:
TPCS8006
Supply Ability:
5000

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Product Details

Description



Features:

• Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.6 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 250 V)
• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Drain - source voltage
VDSS
250
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
250
V
Gate - source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
1.1
A
Pulse (Note 1)
IDP
4.4
Drain power dissipation (t = 10 s) (Note 2a)
PD
1.5
W
Drain power dissipation (t = 10 s) (Note 2b)
PD
0.6
Single pulse avalanche energy (Note3)
EAS
0.07
mJ
Avalanche current
IAR
1.1
A
Repetitive avalanche energy (Note2a, Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
Storage temperature
Tstg
−55~150
Note 1, Note 2, Note 3 and Note 4: See the next page.
            This transistor is an electrostatic-sensitive device. Please handle with caution.



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