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TPCS8302

Application• Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 22 m (typ.)• High forward transfer admittance: |Yfs| = 12 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)• Enhancement mode: Vth = −...

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TPCS8302: Application• Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 22 m (typ.)• High forward transfer admittance: |Yfs| = 12 S (typ.)• Low...

TPCS8302 Data Sheet

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Part Number:
TPCS8302
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 22 m (typ.)
• High forward transfer admittance: |Yfs| = 12 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5~−1.2 V (VDS = −10 V, ID = −200 A)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS −20 V
Drain-gate voltage (RGS = 20 k) VDGR −20 V
Gate-source voltage VGSS ±12 V
Drain current DC (Note 1) ID −5 A
Pulse (Note 1) IDP −20
Drain power dissipation
(t = 10 s)
(Note 2a)		 Single-device operation (Note 3a) PD (1) 1.1 W
Single-device value
at dual operation
(Note 3b)		 PD (2) 0.75
Drain power dissipation
(t = 10 s)
(Note 2b)		 Single-device operation (Note 3a) PD (1) 0.6 W
Single-device value
at dual operation
(Note 3b)		 PD (2) 0.35
Single pulse avalanche energy
(Note 4)		 EAS 32.5 mJ
Avalanche current IAR −5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)		 EAR 0.075 mJ
Channel temperature Tch 150  
Storage temperature range Tstg −55~150  

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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