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TPCS8213

Application• Small footprint due to a small and thin package• Low drain-source ON-resistance: RDS (ON) = 8.4 m (typ.)• High forward transfer admittance: |Yfs| = 13 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)• Enhancement-mode: Vth = 0.5~1.4 V (VDS = ...

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TPCS8213: Application• Small footprint due to a small and thin package• Low drain-source ON-resistance: RDS (ON) = 8.4 m (typ.)• High forward transfer admittance: |Yfs| = 13 S (typ.)• ...

TPCS8213 Data Sheet

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Part Number:
TPCS8213
Supply Ability:
5000

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Product Details

Description



Application

• Small footprint due to a small and thin package
• Low drain-source ON-resistance: RDS (ON) = 8.4 m (typ.)
• High forward transfer admittance: |Yfs| = 13 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200 A)
• Common drain


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS=20 k)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
Drain current DC                         (Note 1)
ID
6
A
Pulse (t = 1 ms)    (Note 1)
IDP
24
Drain power
dissipation
(t = 10 s)
      (Note 2a)		 Single-device
operation            (Note 3a)
PD(1)
1.1
W
Single-device value
at dual operation
                           (Note 3b)
PD(2)
0.75
Drain power
dissipation
(t = 10 s)
      (Note 2b)		 Single-device
operation            (Note 3a)
PD(1)
0.6
W
Single-device value
at dual operation
                            (Note 3b)
PD(2)
0.35
Single-pulse avalanche energy     (Note4)
EAS
9.4
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy
Single-device value at dual operation
                                         (Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: For Notes 1 to 5, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)




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