Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) = 16 m (typ.)`High forward transfer admittance: |Yfs| = 11 S (typ.)`Low leakage current: IDSS = 10 A (max) (VDS = 20 V)`Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A)Specifications ...
TPCS8211: Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) = 16 m (typ.)`High forward transfer admittance: |Yfs| = 11 S (typ.)`Low leakage current: IDSS = 10 ...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
20 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
20 |
V | |
Gate-source voltage |
VGSS |
±12 |
V | |
Drain current |
DC (Note 1) |
ID |
6 |
A |
Pulse (Note 1) |
IDP |
24 | ||
Drain power |
Single-device operation |
PD (1) |
1.1 |
W |
Single-device value at |
PD (2) |
0.75 |
W | |
Drain power |
Single-device operation |
PD (1) |
0.6 |
W |
Single-device value at |
PD (2) |
0.35 | ||
Single pulse avalanche energy (Note 4) |
EAS |
46.8 |
mJ | |
Avalanche current |
IAR |
6 |
A | |
Repetitive avalanche energy |
EAR |
0.075 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
−55~150 |
°C |
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.