Position: Home  > All Categories> Integrated Circuits (ICs) > TPCS8210

TPCS8210

Features: • Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 19 m (typ.)• High forward transfer admittance: |Yfs| = 9.2 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)• Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 ...

product image

TPCS8210 Picture
See larger image
SeekIC No. : 004526251 Detail

TPCS8210: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 19 m (typ.)• High forward transfer admittance: |Yfs| = 9.2 S (typ.)• Low...

TPCS8210 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPCS8210
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 19 m (typ.)
• High forward transfer admittance: |Yfs| = 9.2 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A)
• Common drain


Specifications

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 20 V
Drain-gate voltage (RGS=20 k) VDGR 20 V
Gate-source voltage VGSS ±12 V
Drain current DC (Note 1) ID 5 A
Pulsed (Note 1) IDP 20
Power dissipation (t= 10 s) (Note 2a) Single-device operation (Note 3a) PD(1) 1.1 W
Single-device value at
dual operation (Note 3b)		 PD(2) 0.75
Power dissipation (t= 10 s) (Note 2b) Single-device operation (Note 3a) PD(1) 0.6
Single-device value at
dual operation (Note 3b)		 PD(2) 0.35
Single pulse avalanche energy (Note 4) EAS 32.5 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)		 EAR 0.075 mJ
Channel temperature Tch 150
Storage temperature range Tstg -55~150


Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Prototyping Products
AVT4168
DE1
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Memory Cards, Modules
WT32
VTL5C7
Transformers
TM-09210
BV222-1-00992
Audio Products
HUC1002
WM-64CT
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
View more