TPCS8204

Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 13 m (typ.)• High forward transfer admittance: |Yfs| = 15 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 ...

product image

TPCS8204 Picture
SeekIC No. : 004526247 Detail

TPCS8204: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 13 m (typ.)• High forward transfer admittance: |Yfs| = 15 S (typ.)• Low...

floor Price/Ceiling Price

Part Number:
TPCS8204
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/11

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON resistance: R DS (ON) = 13 m (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 k)
VDGR
20
V

Gate-source voltage

VGSS

±12

V

Drain current

DC (Note 1)

ID

6

A

Pulse (Note 1)

IDP

24

Drain power
dissipation
(t = 10 s)
(Note 2a)

Single-device operation
(Note 3a)

PD (1)

1.1

W

Single-device value at
dual operation(Note 3b)

PD (2)

0.75

W

Drain power
dissipation
(t = 10 s)
(Note 2b)

Single-device operation
(Note 3a)

PD (1)

0.6

W

Single-device value at
dual operation(Note 3b)

PD (2)

0.35

Single pulse avalanche energy (Note 4)

EAS

46.8

mJ

Avalanche current

IAR

6

A

Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)

EAR

0.075

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires - Management
Circuit Protection
Isolators
Motors, Solenoids, Driver Boards/Modules
Undefined Category
Power Supplies - External/Internal (Off-Board)
View more