TPCS8203

Features of the TPCS8203 are:(1)low drain-source ON resistance:RDS(ON)=17m(Typ.);(2)high forward transfer admittance:Yfs=13s(Typ.);(3)low leakage current:IDSS=10A(Max)(VDS=20V);(4)enhancement-mode:Vth=0.5 to 1.2V(VDS=10V,ID=200A).

The absolute maximum ratings of the TPCS8203 can be summarized as:(1):the characteristic is drain-source voltage,the symbol is VDSS,the rating is 20,the unit is V;(2):the characteristic is drain-gate voltage,the symbol is VDGR,the rating is 20,the unit is V;(3):the characteristic is gate-source voltage,the symbol is VGSS,the rating is ±12,the unit is V;(4):the characteristic is drain current DC,the symbol is ID,the rating is 6,the unit is A;(5):the characteristic is drain current pulse,the symbol is IDP,the rating is 24,the unit is A;(6):the characteristic is drain power dissipation(Ta=25),the symbol is PD,the rating is 1.0,the unit is W;(7):the characteristic is single pulse avalanche energy,the symbol is EAS,the rating is 234,the unit is mJ;(8):the characteristic is avalanche current,the symbol is IAR,the rating is 6,the unit is A;(9):the characteristic is repetitive avalanche energy,the symbol is EAR,the rating is 0.1,the unit is mJ;(10):the characteristic is channel temperature,the symbol is Tch,the rating is 150,the unit is ;(11):the characteristic is storage temperature range,the symbol is Tstg,the rating is -55 to 150,the unit is .