MOSFET MOSFET P-Ch 30V 10A
TPCS8105(TE12L,Q,M: MOSFET MOSFET P-Ch 30V 10A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A |
Resistance Drain-Source RDS (on) : | 0.0135 Ohms | Configuration : | Single Quad Drain Triple Source |
Mounting Style : | SMD/SMT | Package / Case : | TSSOP-8 |
Packaging : | Reel |
Technical/Catalog Information | TPCS8105(TE12L,Q,M |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 5A, 10V |
Input Capacitance (Ciss) @ Vds | 5710pF @ 10V |
Power - Max | 600mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 107nC @ 10V |
Package / Case | 2-3R1F |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPCS8105 TE12L,Q,M TPCS8105TE12L,Q,M |