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TPCS8105(TE12L,Q,M: MOSFET MOSFET P-Ch 30V 10A

TPCS8105(TE12L,Q,M Data Sheet

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Part Number:: TPCS8105(TE12L,Q,M
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/11/21

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MOSFET P-ch -30V -11A 0.012 ohms single

Product Details

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	10 A
Resistance Drain-Source RDS (on) :	0.0135 Ohms	Configuration :	Single Quad Drain Triple Source
Mounting Style :	SMD/SMT	Package / Case :	TSSOP-8
Packaging :	Reel

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : - 30 V
Package / Case : TSSOP-8
Resistance Drain-Source RDS (on) : 0.0135 Ohms

Parameters:

Technical/Catalog Information	TPCS8105(TE12L,Q,M
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	13.5 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	5710pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	2-3R1F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCS8105 TE12L,Q,M TPCS8105TE12L,Q,M

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