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TPCS8105

Features: • Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 9.6 m (typ.)• High forward transfer admittance: |Yfs| = 23 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)• Enhancement mode: Vth = −...

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TPCS8105: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 9.6 m (typ.)• High forward transfer admittance: |Yfs| = 23 S (typ.)• Low...

TPCS8105 Data Sheet

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Part Number:
TPCS8105
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 9.6 m (typ.)
• High forward transfer admittance: |Yfs| = 23 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS −30 V
Drain-gate voltage (RGS = 20 k) VDGR −30 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID −10 A
Pulse (Note 1) IDP −40 A
Drain power dissipation (t = 10 s)
(Note 2a)		 PD 1.1 W
Drain power dissipation (t = 10 s)
(Note 2b)		 PD 0.6 W
Single pulse avalanche energy
(Note 3)		 EAS 26 mJ
Avalanche current IAR −10 A
Repetitive avalanche energy
(Note 2a) (Note 4)		 EAR 0.11 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55 to 150

Note:

(Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.


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