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TPCS8104(TE12L,Q): MOSFET P-ch -30V -11A 0.012 ohms single

TPCS8104(TE12L,Q) Data Sheet

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Part Number:: TPCS8104(TE12L,Q)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	11 A
Resistance Drain-Source RDS (on) :	0.012 Ohms	Configuration :	Single Triple Drain Quad Source
Mounting Style :	SMD/SMT	Package / Case :	TSSOP-8
Packaging :	Reel

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source

Parameters:

Technical/Catalog Information	TPCS8104(TE12L,Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	12 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	5710pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	2-3R1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCS8104 TE12L,Q TPCS8104TE12L,Q

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