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TPCS8101

Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) = 15 m (typ.)`High forward transfer admittance: |Yfs| = 12 S (typ.)`Low leakage current: IDSS = −10 A (max) (VDS = −30 V)`Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 ...

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SeekIC No. : 004526241 Detail

TPCS8101: Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) = 15 m (typ.)`High forward transfer admittance: |Yfs| = 12 S (typ.)`Low leakage current: IDSS = ...

TPCS8101 Data Sheet

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Part Number:
TPCS8101
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Small footprint due to small and thin package
`Low drain-source ON resistance: R DS (ON) = 15 m (typ.)
`High forward transfer admittance: |Yfs| = 12 S (typ.)
`Low leakage current: IDSS = −10 A (max) (VDS = −30 V)
`Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 k)
VDGR
-30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
−6
A
Pulse (Note 1)
IDP
-24
Drain power dissipation (t = 5 s)
(Note 2a)
PD
1.5
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
0.6
W
Single pulse avalanche energy (Note3)
EAS
46.8
mJ
Avalanche current
IAR
−6
A
Repetitive avalanche energy
(Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution




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