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TPCS8009-H(TE12L,Q

MOSFET MOSFET NCh 150V 2.1A Rdson=0.35Ohm

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SeekIC No. : 00164167 Detail

TPCS8009-H(TE12L,Q: MOSFET MOSFET NCh 150V 2.1A Rdson=0.35Ohm

TPCS8009-H(TE12L,Q Data Sheet

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Part Number:
TPCS8009-H(TE12L,Q
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.1 A
Resistance Drain-Source RDS (on) : 0.35 Ohms Configuration : Single Quad Drain Triple Source
Mounting Style : SMD/SMT Package / Case : TSSOP-8
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.35 Ohms
Package / Case : TSSOP-8
Continuous Drain Current : 2.1 A


Parameters:

Technical/Catalog InformationTPCS8009-H(TE12L,Q
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C2.1A
Rds On (Max) @ Id, Vgs350 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 600pF @ 10V
Power - Max600mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case2-3R1F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCS8009 H TE12L,Q
TPCS8009HTE12L,Q



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