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TPCS8009-H

Features: • Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.)• High forward transfer admittance: |Yfs| = 2.1 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 150 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic ...

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TPCS8009-H: Features: • Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.)• High forward transfer admittance: |Yfs| = 2.1 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 150 V)&#...

TPCS8009-H Data Sheet

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Part Number:
TPCS8009-H
Supply Ability:
5000

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Product Details

Description



Features:

• Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.)
• High forward transfer admittance: |Yfs| = 2.1 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 150 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Value Units
Drain-source voltage VDSS 150 V
Drain-gate voltage (RGS = 20 k) VDGR 150 V
Gate-source voltage VGSS ±20 V
Continuous Drain Current DC (Note 1) ID 2.1 A
Pulse (Note 1) IDP 8.4
Drain power dissipation (t = 10 s)
(Note 2a)		 PD 1.5 W

Drain power dissipation (t = 10 s)
(Note 2b)

 PD 0.6
Single-pulse avalanche energy EAS 3 mJ
Avalanche current IAR 2.1 A
Repetitive avalanche energy
(Note2a, Note 4)
 EAR 0.15 mJ
Channel temperature Tch 150
Storage temperature range TJ, TSTG - 55 to +150


Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.




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