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TPCS8008-H(TE12L,Q: MOSFET MOSFET NCh 250V 1.7A

TPCS8008-H(TE12L,Q Data Sheet

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Part Number:: TPCS8008-H(TE12L,Q
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/12/30

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What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	1.7 A
Resistance Drain-Source RDS (on) :	0.58 Ohms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSSOP-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 1.7 A
Package / Case : TSSOP-8
Resistance Drain-Source RDS (on) : 0.58 Ohms

Parameters:

Technical/Catalog Information	TPCS8008-H(TE12L,Q
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	1.7A
Rds On (Max) @ Id, Vgs	580 mOhm @ 800mA, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	2-3R1F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCS8008 H TE12L,Q TPCS8008HTE12L,Q

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