Position: Home  > All Categories> Integrated Circuits (ICs) > TPCS8008-H

TPCS8008-H

Application• Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.)• High forward transfer admittance: |Yfs| = 1.8 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 250 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)• Low drain-source ON-resista...

product image

TPCS8008-H Picture
See larger image
SeekIC No. : 004526239 Detail

TPCS8008-H: Application• Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.)• High forward transfer admittance: |Yfs| = 1.8 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 250 V)&...

TPCS8008-H Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPCS8008-H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

• Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 250 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

• Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 250 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)




Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
V
Drain-gate voltage (RGS = 20 k)
VDGR
250
V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
1.7
A
Pulse (Note 1)
IDP
6.8
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.5
W
Drain power dissipation (t = 10 s)
(Note 2b)
PD
0.6
Single-pulse avalanche energy(Note3)
EAS
1.7
mJ
Avalanche current
IAR
1.7
A
Repetitive avalanche energy
(Note2a, Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.



Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
V
Drain-gate voltage (RGS = 20 k)
VDGR
250
V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
1.7
A
Pulse (Note 1)
IDP
6.8
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.5
W
Drain power dissipation (t = 10 s)
(Note 2b)
PD
0.6
Single-pulse avalanche energy(Note3)
EAS
1.7
mJ
Avalanche current
IAR
1.7
A
Repetitive avalanche energy
(Note2a, Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.








Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Optical Inspection Equipment
AA924
A21K4B
Undefined Category
VI-B63-IU
X27 589
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Prototyping Products
AVT4168
DE1
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more