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TPCS8007-H(TE12L,Q

MOSFET MOSFET 200V 1.9A

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SeekIC No. : 00158098 Detail

TPCS8007-H(TE12L,Q: MOSFET MOSFET 200V 1.9A

TPCS8007-H(TE12L,Q Data Sheet

floor Price/Ceiling Price

US $ .37~.45 / Piece | Get Latest Price
Part Number:
TPCS8007-H(TE12L,Q
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1670
  • 1670~2000
  • 2000~3000
  • 3000~5000
  • Unit Price
  • $.45
  • $.38
  • $.38
  • $.37
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single Quad Drain Triple Source
Mounting Style : SMD/SMT Package / Case : TSSOP-8
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 200 V
Package / Case : TSSOP-8
Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Parameters:

Technical/Catalog InformationTPCS8007-H(TE12L,Q
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C1.9A
Rds On (Max) @ Id, Vgs450 mOhm @ 900mA, 10V
Input Capacitance (Ciss) @ Vds 600pF @ 10V
Power - Max600mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case2-3R1F
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCS8007 H TE12L,Q
TPCS8007HTE12L,Q



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