TPCS8007-H(TE12L,Q, US $ .37-.45 , Toshiba, TPCS8007-H(TE12L,Q DataSheet download, circuit diagram from SeekIC.com

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TPCS8007-H(TE12L,Q: MOSFET MOSFET 200V 1.9A

TPCS8007-H(TE12L,Q Data Sheet

US $ .37~.45 / Piece | Get Latest Price

Part Number:: TPCS8007-H(TE12L,Q
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/12/30

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Recent History
What is this?

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MOSFET N-Cha 200V 1.3A 0.8Ohms
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	1.9 A
Resistance Drain-Source RDS (on) :	0.45 Ohms	Configuration :	Single Quad Drain Triple Source
Mounting Style :	SMD/SMT	Package / Case :	TSSOP-8
Packaging :	Reel

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 200 V
Package / Case : TSSOP-8
Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 0.45 Ohms

Parameters:

Technical/Catalog Information	TPCS8007-H(TE12L,Q
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1.9A
Rds On (Max) @ Id, Vgs	450 mOhm @ 900mA, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	2-3R1F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCS8007 H TE12L,Q TPCS8007HTE12L,Q

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