MOSFET N-channel 620V, 2.7A Power MOSFET
STB3N62K3: MOSFET N-channel 620V, 2.7A Power MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 620 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2.7 A | ||
Resistance Drain-Source RDS (on) : | 2.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB3N62K3 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 620V |
Current - Continuous Drain (Id) @ 25° C | 2.7A |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.4A, 10V |
Input Capacitance (Ciss) @ Vds | 385pF @ 25V |
Power - Max | 45W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 13nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB3N62K3 STB3N62K3 497 8476 6 ND 49784766ND 497-8476-6 |