Features: ` TYPICAL RDS(on) = 0.019 ` LOW GATE CHARGE A 100oC ` APPLICATIONORIENTED CHARACTERIZATION ` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ` ADD SUFFIX T4 FORORDERING IN TAPE & REELApplication· HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AM...
STB3020L: Features: ` TYPICAL RDS(on) = 0.019 ` LOW GATE CHARGE A 100oC ` APPLICATIONORIENTED CHARACTERIZATION ` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ` ADD SUFFIX T4 FORORDERING IN TAPE & REE...
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Symbol | Parameter |
Value |
Unit |
VDS | Drain-source Voltage (VGS = 0) |
100 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
100 |
V |
VGS | Gate- source Voltage |
±20 |
V |
ID | Drain Current (continuos) at TC = 25 |
40 |
A |
ID | Drain Current (continuos) at TC = 100 |
28 |
A |
IDM() | Drain Current (pulsed) |
160 |
A |
Ptot | Total Dissipation at TC = 25 |
80 |
W |
Derating Factor |
0.53 |
W/ | |
Tstg | Storage Temperature |
65 to 175
|
|
Tj | Max. Operating Junction Temperature |
175 |
This Power Mosfet STB3020L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.