STB3020L

Features: ` TYPICAL RDS(on) = 0.019 ` LOW GATE CHARGE A 100oC ` APPLICATIONORIENTED CHARACTERIZATION ` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ` ADD SUFFIX T4 FORORDERING IN TAPE & REELApplication· HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AM...

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STB3020L Picture
SeekIC No. : 004507143 Detail

STB3020L: Features: ` TYPICAL RDS(on) = 0.019 ` LOW GATE CHARGE A 100oC ` APPLICATIONORIENTED CHARACTERIZATION ` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE ` ADD SUFFIX T4 FORORDERING IN TAPE & REE...

floor Price/Ceiling Price

Part Number:
STB3020L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

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Product Details

Description



Features:

  `  TYPICAL RDS(on) = 0.019
  `  LOW GATE CHARGE A 100oC
  `  APPLICATIONORIENTED CHARACTERIZATION
  `  FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
  `  ADD SUFFIX "T4" FORORDERING IN TAPE & REEL



Application

 · HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS
 · MOTOR CONTROL, AUDIO AMPLIFIERS
 · DC-AC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
 · AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
100
V
VDGR Drain-gate Voltage (RGS = 20 k)
100
V
VGS Gate- source Voltage
±20
V
ID Drain Current (continuos) at TC = 25
40
A
ID Drain Current (continuos) at TC = 100
28
A
IDM() Drain Current (pulsed)
160
A
Ptot Total Dissipation at TC = 25
80
W
  Derating Factor
0.53
W/
Tstg Storage Temperature
65 to 175
Tj Max. Operating Junction Temperature
175
() Pulse width limited by safe operating area


Description

This Power Mosfet STB3020L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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