STB3015L

Application

·HIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC & DC-AC CONVERTERS IN HIGHPERFORMANCE VRMs
·AUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20k )	30	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25 oC	40	A
ID	Drain Current (continuous) at Tc = 100 oC	28	A
IDM(`)	Drain Current (pulsed)	160	A
Ptot	Total Dissipation at Tc = 25 oC	80	W
	Derating Factor	0.53	W/oC
dv/dt(1)	Peak Diode Recovery voltage slope	7	V/ns
Tstg	Storage Temperature	-65 to 175	oC
Tj	Max. Operating Junction Temperature	175	oC

Description

This Power MOSFET STB3015L is the latest development of STMicroelectronics unique " Single Feature SizeÔ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.