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STB300NH02L

MOSFET N Ch 200V 0.15 Ohm 15A Pwr MOSFET

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SeekIC No. : 00151993 Detail

STB300NH02L: MOSFET N Ch 200V 0.15 Ohm 15A Pwr MOSFET

STB300NH02L Data Sheet

floor Price/Ceiling Price

US $ 2.23~3.36 / Piece | Get Latest Price
Part Number:
STB300NH02L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
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  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.36
  • $2.7
  • $2.45
  • $2.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.0018 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 120 A
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 24 V
Resistance Drain-Source RDS (on) : 0.0018 Ohms


Features:

RDS(on)*Qg industry's benchmark
Conduction losses reduced
Switching losses reduced
Low profile, very low parasitic inductance


Application

Switching application
Specifically designed and optimized for high efficiency DC/DC converters
OR-ing


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0)
 24 V
VGS Gate-source voltage ± 20 V
ID(1) Drain current (continuous) at TC = 25°C 120 A
ID(1) Drain current (continuous) at TC = 100°C 120 A
IDM(2) Drain current (pulsed) 480 A
PTOT(3) Total dissipation at TC = 25°C 300 W
  Derating factor 2 W/°C
Tj Operating junction temperature -55 to 175 °C
1. This value is limited by package
2. Pulse width limited by safe operating area
3. This value is rated according Rthj-case


Description

This product STB300NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable for high current OR-ing application.




Parameters:

Technical/Catalog InformationSTB300NH02L
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs1.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 7055pF @ 15V
Power - Max300W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs109.4nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB300NH02L
STB300NH02L
497 7945 6 ND
49779456ND
497-7945-6



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