STB30NM60N, US $ 3.23-3.7 , STMicroelectronics, STB30NM60N DataSheet download, circuit diagram from SeekIC.com

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STB30NM60N: MOSFET N-channel 600V, 25A Power II Mdmesh

STB30NM60N Data Sheet

US $ 3.23~3.7 / Piece | Get Latest Price

Part Number:: STB30NM60N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	25 A
Resistance Drain-Source RDS (on) :	0.13 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.13 Ohms

Parameters:

Technical/Catalog Information	STB30NM60N
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	130 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	2700pF @ 50V
Power - Max	190W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	91nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB30NM60N STB30NM60N 497 8474 6 ND 49784746ND 497-8474-6

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STB30NM60N

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