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STB30NM50N

MOSFET N-ch 500 Volt 27Amp Power MDmesh

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SeekIC No. : 00161913 Detail

STB30NM50N: MOSFET N-ch 500 Volt 27Amp Power MDmesh

STB30NM50N Data Sheet

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Part Number:
STB30NM50N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 0.115 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 0.115 Ohms


Parameters:

Technical/Catalog InformationSTB30NM50N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C27A
Rds On (Max) @ Id, Vgs115 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds 2740pF @ 50V
Power - Max190W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs94nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB30NM50N
STB30NM50N
497 8768 2 ND
49787682ND
497-8768-2



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