SIA414DJ-T1-GE3, US $ .38-.62 , Vishay/Siliconix, SIA414DJ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00149513 Detail

SIA414DJ-T1-GE3: MOSFET 8.0V 12A 19W 11mohm @ 4.5V

SIA414DJ-T1-GE3 Data Sheet

US $ .38~.62 / Piece | Get Latest Price

Part Number:: SIA414DJ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$.62
$.49
$.43
$.38

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/4

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Recent History
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US $.16 - .32 / Piece

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	8 V
Gate-Source Breakdown Voltage :	+/- 5 V	Continuous Drain Current :	12 A
Resistance Drain-Source RDS (on) :	11 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK SC-70-6L	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 8 V
Continuous Drain Current : 12 A
Package / Case : PowerPAK SC-70-6L
Gate-Source Breakdown Voltage : +/- 5 V
Resistance Drain-Source RDS (on) : 11 mOhms

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SIA414DJ-T1-GE3

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