SIA406DJ

The SIA519EDJ is designed as one kind of N-Channel 12-V (D-S) MOSFET device that can be used in wide range of applications such as (1)load switch for portable devices; (2)DC/DC converters. And this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET-Power MOSFET; (3)New Thermally Enhanced PowerPAK-SC-70 Package are Small Footprint Area and Low On-Resistance; (4)100 % Rg Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SIA519EDJ can be summarized as:(1)Drain-Source Voltage: +/-12 V;(2)Gate-Source Voltage: +/- 8 V;(3)Pulsed Drain Current: 20 A;(4)Maximum Power Dissipation: 2.2 to 19 W;(5)Continuous Drain Current (TJ = 150 °C): 4.5 or 2.9 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the SIA519EDJ can be summarized as:(1)Drain-Source Breakdown Voltage: +/-12 V;(2)VDS Temperature Coefficient: 11 mV/°C;(3)VGS(th) Temperature Coefficient: -2.9 mV/°C;(4)Gate-Source Threshold Voltage: 0.4 to 1.0 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 20 A;(7)Forward Transconductance: 38 S. If you want to know more information about the SIA519EDJ, please download the datasheet in www.seekic.com or www.chinaicmart.com .