SIA400EDJ-T1-GE3, US $ .13-.19 , Vishay/Siliconix, SIA400EDJ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00153585 Detail

SIA400EDJ-T1-GE3: MOSFET 30V 12A 19.2W 19mOhms @ 4.5V

SIA400EDJ-T1-GE3 Data Sheet

US $ .13~.19 / Piece | Get Latest Price

Part Number:: SIA400EDJ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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10~100
100~250

Unit Price
$.19
$.17
$.14
$.13

Processing time
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15 Days
15 Days
15 Days

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Upload time: 2024/12/25

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Recent History
What is this?

SIA406DJ evaluate
SpecificationsDescriptionThe SIA519EDJ is designed as one kind of N-Channel 12-V (D-S) MOSFET devi...
SIA406DJ-T1-GE3 evaluate
US $.16 - .32 / Piece

MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V
SiA408DJ evaluate
DescriptionSiA408DJ: N-Channel 30-V (D-S) MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	12 A
Resistance Drain-Source RDS (on) :	0.019 Ohms at 4.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-70	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70
Resistance Drain-Source RDS (on) : 0.019 Ohms at 4.5 V

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SIA400EDJ-T1-GE3

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