SIA400EDJ-T1-GE3

MOSFET 30V 12A 19.2W 19mOhms @ 4.5V

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SIA400EDJ-T1-GE3 Picture
SeekIC No. : 00153585 Detail

SIA400EDJ-T1-GE3: MOSFET 30V 12A 19.2W 19mOhms @ 4.5V

floor Price/Ceiling Price

US $ .13~.19 / Piece | Get Latest Price
Part Number:
SIA400EDJ-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.19
  • $.17
  • $.14
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.019 Ohms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-70
Resistance Drain-Source RDS (on) : 0.019 Ohms at 4.5 V


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