SIA406DJ-T1-GE3, US $ .16-.32 , Vishay/Siliconix, SIA406DJ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146174 Detail

SIA406DJ-T1-GE3: MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V

SIA406DJ-T1-GE3 Data Sheet

US $ .16~.32 / Piece | Get Latest Price

Part Number:: SIA406DJ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

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0~1
1~10
10~100
100~250

Unit Price
$.32
$.22
$.19
$.16

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/4

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Recent History
What is this?

SIA400EDJ-T1-GE3 evaluate
US $.13 - .19 / Piece

MOSFET 30V 12A 19.2W 19mOhms @ 4.5V
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SpecificationsDescriptionThe SIA519EDJ is designed as one kind of N-Channel 12-V (D-S) MOSFET devi...
SiA408DJ evaluate
DescriptionSiA408DJ: N-Channel 30-V (D-S) MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	12 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	4.5 A
Resistance Drain-Source RDS (on) :	19.8 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-70-6	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 12 V
Continuous Drain Current : 4.5 A
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 19.8 mOhms

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SIA406DJ-T1-GE3

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