SIA413DJ-T1-GE3, US $ .38-.62 , Vishay/Siliconix, SIA413DJ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00149966 Detail

SIA413DJ-T1-GE3: MOSFET 12V 12A 19W 29mohm @ 4.5V

SIA413DJ-T1-GE3 Data Sheet

US $ .38~.62 / Piece | Get Latest Price

Part Number:: SIA413DJ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$.62
$.49
$.43
$.38

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/23

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Recent History
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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	12 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	10 A
Resistance Drain-Source RDS (on) :	29 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK SC-70-6L	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 12 V
Package / Case : PowerPAK SC-70-6L
Resistance Drain-Source RDS (on) : 29 mOhms

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SIA413DJ-T1-GE3

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