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RFP8P10

MOSFET TO-220

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SeekIC No. : 00165874 Detail

RFP8P10: MOSFET TO-220

RFP8P10 Data Sheet

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Part Number:
RFP8P10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Drain-Source Breakdown Voltage : - 100 V


Features:

• 8A, 100V
• rDS(ON) = 0.400W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFP8P10 UNITS
Drain to Source Voltage (Note 1) VDSS -100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -100 V
Continuous Drain Current ID 8 A
Pulsed Drain Current (Note 3) IDM 20 A
Gate to Source Voltage VGS ±20 V
Drain Current
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 31 A
Pulsed Avalanche Rating UIS Figures 6, 14, 15  
Operating and Storage Temperature .TJ, TSTG -55 to 150 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



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