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RFP8P06E

Features: • 8A, 60V• rDS(ON) = 0.300W• Temperature Compensating PSPICE® Model• 2kV ESD Protected• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperature• Related Literature- TB334 Guidelines for Soldering Surface MountC...

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SeekIC No. : 004476653 Detail

RFP8P06E: Features: • 8A, 60V• rDS(ON) = 0.300W• Temperature Compensating PSPICE® Model• 2kV ESD Protected• Peak Current vs Pulse Width Curve• UIS Rating Curve• 1...

RFP8P06E Data Sheet

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Part Number:
RFP8P06E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 8A, 60V
• rDS(ON) = 0.300W
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"


Specifications

  RFD8P06E, RFD8P06ESM, RFP8P06E UNITS
Drain to Source Voltage (Note 1) VDSS -60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -60 V
Continuous (Figure 2)ID 16 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve A
Gate to Source Voltage VGS ±20 V

Pulsed Drain Current IDM
Refer to UIS Curve		 W
Power Dissipation Refer to UIS Curve
Derate above 25oC 0.32 W/oC
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFP8P06E were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.




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