MOSFET TO-220AB P-Ch Power
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 50 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 8 A |
Resistance Drain-Source RDS (on) : | 0.3 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole |
Package / Case : | TO-220AB |
Technical/Catalog Information | RFP8P05 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 8A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 48W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 80nC @ 20V |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | RFP8P05 RFP8P05 |