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RFP8P06LE

Features: • 8A, 60V• rDS(ON) = 0.300W• 2kV ESD Protected• Temperature Compensating PSPICE® Model• PSPICE Thermal Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating TemperatureSpecifications RFD8P06LE, RFD8P06LESM,R...

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SeekIC No. : 004476654 Detail

RFP8P06LE: Features: • 8A, 60V• rDS(ON) = 0.300W• 2kV ESD Protected• Temperature Compensating PSPICE® Model• PSPICE Thermal Model• Peak Current vs Pulse Width Curve̶...

RFP8P06LE Data Sheet

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Part Number:
RFP8P06LE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 8A, 60V
• rDS(ON) = 0.300W
• 2kV ESD Protected
• Temperature Compensating PSPICE® Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature


Specifications

  RFD8P06LE, RFD8P06LESM,
RFP8P06LE		 UNITS
Drain to Source Voltage (Note 1) VDSS -60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -60 V
Continuous Drain Current ID15 A
TC = 25oC ID
 -8
TC = 100oC . ID -6.3
Pulsed Drain Current (Note 3) IDM Refer to UIS Curve A
Gate to Source Voltage VGS ±10 V

Power Dissipation PD
25oC		 80 W
Pulsed Avalanche Rating EAS Figures 6, 16, 17
Derate above 25oC 0.533 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Maximum Lead Temperature for Soldering TL
(0.063in (1.6mm) from case for 10s)		 300 o C



Description

These products RFP8P06LE are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203.




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