Features: • 8A, 200V• rDS(ON) = 0.600W• Design Optimized for 5V Gate Drives• Can be Driven Directly from QMOS, NMOS,TTL Circuits• Compatible with Automotive Drive Requirements• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Tra...
RFP8N20L: Features: • 8A, 200V• rDS(ON) = 0.600W• Design Optimized for 5V Gate Drives• Can be Driven Directly from QMOS, NMOS,TTL Circuits• Compatible with Automotive Drive Requi...
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RFP8N20L | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 200 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 200 | V |
Continuous Drain Current ID | 8 | A |
Pulsed Drain Current (Note 3) IDM | 20 | A |
Gate to Source Voltage VGS | 10 | V |
Maximum Power Dissipation PD | 60 | W |
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 31 | A |
Pulsed Avalanche Rating UIS | Figures 6, 14, 15 | |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |