MOSFET P-CH 30V 1A TSMT6
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1 A | ||
Resistance Drain-Source RDS (on) : | 0.6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSMT-6 | Packaging : | Reel |
Technical/Catalog Information | QS6U24TR |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1A |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 1A, 10V |
Input Capacitance (Ciss) @ Vds | 90pF @ 10V |
Power - Max | 900mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 1.7nC @ 5V |
Package / Case | TSMT6 |
FET Feature | Diode (Isolated) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | QS6U24TR QS6U24TR QS6U24CT ND QS6U24CTND QS6U24CT |