QS6U22TR, US $ .1-.12 , ROHM Semiconductor, QS6U22TR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158473 Detail

QS6U22TR: MOSFET P-CH 20V 1.5A

QS6U22TR Data Sheet

US $ .1~.12 / Piece | Get Latest Price

Part Number:: QS6U22TR
Mfg:: ROHM Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/22

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What is this?

QS6U22 evaluate
Features: · The QS6U22 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package...
QS6U24 evaluate
Features: ·The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 p...
QS6U24TR evaluate
US $.1 - .11 / Piece

MOSFET P-CH 30V 1A TSMT6

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	- 1.5 A
Resistance Drain-Source RDS (on) :	215 mOhms at 4.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSMT-6	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 1.5 A
Package / Case : TSMT-6
Resistance Drain-Source RDS (on) : 215 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	QS6U22TR
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	215 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	270pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	3nC @ 4.5V
Package / Case	TSMT6
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	QS6U22TR QS6U22TR

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QS6U22TR

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