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QS6U22

Features: · The QS6U22 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package.· Pch Treueh MOSFET have a low on-state resistance with a fast switching.· Nch Treueh MOSFET is reacted a low voltage drive (4V).· The Independently connected Schottky barrier diode have a low forwar...

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SeekIC No. : 004468552 Detail

QS6U22: Features: · The QS6U22 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package.· Pch Treueh MOSFET have a low on-state resistance with a fast switching.· Nch Treueh MOSFET is rea...

QS6U22 Data Sheet

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Part Number:
QS6U22
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·  The QS6U22 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package.
·  Pch Treueh MOSFET have a low on-state resistance with a fast switching.
·  Nch Treueh MOSFET is reacted a low voltage drive (4V).
·  The Independently connected Schottky barrier diode have a low forward voltage.


Application

· Load switch, DC / DC conversion


Specifications

< MOSFET >
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
-20
V
Gatesource voltage
VGSS
±12
V
Drain current Continuous
ID
±1.5
A
Pulsed
IDP
±6.0
A 1
Source current
(Body diode)		 Continuous
IS
-0.75
A
Pulsed
ISP
-6.0
A 1
Channel temperature
Tch
150

< Di >
Repetitive peak reverse voltage
VRM
25
 V
Reverse voltage
VR
20
 V
Forward current
IF
0.7
 A
Forward current surge peak
IFSM
3.0
 A 2
Junction temperature
Tj
150

< MOSFET AND Di >
Total power dissipation
PD
1.25
 W / Total 3
Range of strage temperature
Tstg
−55 to +150

1 Pw10s, Duty cycle1% 2 60Hz Connection Diagram1cyc. 3 Total mounted on a ceramic board


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