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QS6U24

Features: ·The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 package.· Pch Treueh MOSFET have a low on-state resisternce with a fast switching.· Pch Treueh MOSFET is neucted a low voltage drive (4V).· The independently connected Schottky barrier diodehave a low ...

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SeekIC No. : 004468553 Detail

QS6U24: Features: ·The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 package.· Pch Treueh MOSFET have a low on-state resisternce with a fast switching.· Pch Treueh MOSFET...

QS6U24 Data Sheet

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Part Number:
QS6U24
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·The QS6U24 conbines Pch Treueh MOSFET with a Schottky barrier diode in a single TSMT6 package.
· Pch Treueh MOSFET have a low on-state resisternce with a fast switching.
· Pch Treueh MOSFET is neucted a low voltage drive (4V).
· The independently connected Schottky barrier diodehave a low forward voltage.


Application

·load switch, DC/DC conversion


Specifications

Parameter
Symbol
Limits
Unit
Drain-source voltage  
VDSS
−30
V
Gate-source voltage  
VGSS
±20
V
Drain current Continuous
ID
±1.0
A
Pulsed
IDP
±2.0
A
Source current
(Body diode)		 Continuous
IS
−0.3
A
Pulsed
ISP
−1.2
A
Channel temperature  
Tch
150
°C


Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
VRM
25
V
Reverse voltage
VR
20
V
Forward current
IF
0.7
A
Forward current surge peak
IFSM
3.0
A
Junction temperature
Tj
125
°C


Parameter
Symbol
Limits
Unit
Total power dissipatino
PD
1.0
W/Total
Range of strage temperature
Tstg
−40~+125
°C



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