Configuration
: Single
Transistor Polarity
: N-Channel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 65 V
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 20 V
Frequency
: 1 GHz
Output Power
: 70 W
Continuous Drain Current
: 7 A
Package / Case
: PowerSO-10RF (Straight Lead)
Gain
: 14.7 dB at 945 MHz
Features: · Excellent thermal stability
· Common source configuration
· POUT = 70W with 14.7dB gain @ 945MHz / 28V
· New RF plastic packageSpecifications
| Symbol |
Parameter |
Value |
Unit |
| V(BR)DSS |
Drain-Source Voltage |
65 |
V |
| VGS |
Gate-Source Voltage |
± 20 |
V |
| ID |
Drain Current |
7 |
A |
| PDISS |
Power Dissipation (@ Tc = 70) |
95 |
W |
| TJ |
Max. Operating Junction Temperature |
165 |
|
| TSTG |
Storage Temperature |
-65 to +150 |
|
DescriptionThe PD57070S-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57070S-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO- 10RF. PD57070S-E's superior linearity performance makes it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. PD57070S-E has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Parameters: | Technical/Catalog Information | PD57070S-E |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 65V |
| Current Rating | 7A |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PD57070S E
PD57070SE
|
PD57070S-E Data Sheet
