Transistors RF MOSFET Power POWER RF Transistor
PD57018-E: Transistors RF MOSFET Power POWER RF Transistor
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 16.5 dB at 945 MHz |
Output Power : | 18 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 2.5 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | PowerSO-10RF (Formed Lead) |
Packaging : | Tube |
Technical/Catalog Information | PD57018-E |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 65V |
Current Rating | 2.5A |
Package / Case | PowerSO-10 Exposed Bottom Pad |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PD57018 E PD57018E 497 5305 5 ND 49753055ND 497-5305-5 |