Transistors RF GaAs C-X Band GaAs MESFET
NE722S01-T1: Transistors RF GaAs C-X Band GaAs MESFET
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Technology Type : | MESFET | Frequency : | 4 GHz | ||
Gain : | 12 dB | Noise Figure : | 0.9 dB | ||
Forward Transconductance gFS (Max / Min) : | 45 mS | Drain Source Voltage VDS : | 5 V | ||
Gate-Source Breakdown Voltage : | - 5 V | Continuous Drain Current : | 120 mA | ||
Maximum Operating Temperature : | + 125 C | Power Dissipation : | 250 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | SO-1 |