LX5512E

DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power.............................................................................................5dBm
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-60°C to +150°C

The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching.

The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA. For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin 3mmx3mm micro-lead package (MLP).

The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g applications.