LX5506B

Features: ` Advanced InGaP HBT` Single-Polarity Voltage Supply` EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V)` Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm` Power Gain ~ 21dB at 5.85GHz & Pout=+18dBm ` P1dB ~ +26dBm across 5.15 5.85 GHz` Total Current ~ 170mA for Pout=+18dBm at 5.25G...

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SeekIC No. : 004403503 Detail

LX5506B: Features: ` Advanced InGaP HBT` Single-Polarity Voltage Supply` EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V)` Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm` Power Gain ~ 21dB at 5.85GHz &am...

floor Price/Ceiling Price

Part Number:
LX5506B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

` Advanced InGaP HBT
` Single-Polarity Voltage Supply
` EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V)
` Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm
` Power Gain ~ 21dB at 5.85GHz & Pout=+18dBm
` P1dB ~ +26dBm across 5.15 5.85 GHz
` Total Current ~ 170mA for Pout=+18dBm at 5.25GHz
` Total Current ~ 200mA for Pout=+20dBm at 5.25GHz
` ACPR ~ -48dBc at 30MHz Offset at Pout=+18dBm
` Integrated Power Detector
` Complete On-Chip Input Match
` Simple Output Capacitor Match
` Small Footprint: 3x3mm2
` Low Profile: 0.9mm



Application

· FCC U-N11 Wireless
· IEEE 802.11a
· HiperLAN2



Pinout

  Connection Diagram


Specifications

DC Supply Voltage, RF Off...............................................................................6V
Collector Current ....................................................................................500mA
Total Power Dissipation..................................................................................3W
RF Input Power.........................................................................................15dBm
Thermal Resistance (Junction-to-Case, JC)............................................... 6/W
Maximum Junction Temperature (TJ max) ..................................................150
Operation Ambient Temperature ......................................................-40 to +85
Storage Temperature........................................................................-65 to 150
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure). 260 (+0, -5)

Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.



Description

The LX5506B is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. It also features an on-chip output power detector to help reduce BOM cost and PCB board space for system implementations. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. LX5506B is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506B an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications.

 




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