Features: ` Advanced InGaP HBT` Single-Polarity Voltage Supply` EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V)` Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm` Power Gain ~ 21dB at 5.85GHz & Pout=+18dBm ` P1dB ~ +26dBm across 5.15 5.85 GHz` Total Current ~ 170mA for Pout=+18dBm at 5.25G...
LX5506B: Features: ` Advanced InGaP HBT` Single-Polarity Voltage Supply` EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V)` Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm` Power Gain ~ 21dB at 5.85GHz &am...
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The LX5506B is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. It also features an on-chip output power detector to help reduce BOM cost and PCB board space for system implementations. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. LX5506B is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506B an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications.