LX5512B

DC Supply Voltage, RF off......................................................................................................7V
Collector Current..............................................................................................................500mA
Total Power Dissipation .........................................................................................................2W
RF Input Power ..................................................................................................................5dBm
Operation Ambient Temperature ............................................................................ -40 to +85oC
Storage Temperature............................................................................................ -60 to +150oC
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........255°C(+5, -0)

The LX5512B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a threestage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process MOCVD).

LX5512B operates at a single low voltage supply of 3.3V with 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current.

The LX5512B is available in a 16- pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of LX 5512B meets the requirements of high-gain power amplifiers for IEEE 802.11b/g applications.