LX5506E

· Advanced InGaP HBT
· 4.9-5.85GHz Operation
·Single-Polarity 3.3V Supply
·Total Current ~ 200mA for Pout=19dBm at 5.25GHz
· P1dB > +26dBm
·Power Gain ~ 23dB at 5.25GHz & Pout=19dBm
·EVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBm
·Integrated Power Detectors
·On-Chip Input Match
· Simple Output Match
·Minimal External Components
· Small Footprint: 3x3mm2
· Low Profile: 0.9mm

The LX5506E is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is   implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It also has an integrated differential output power detector pair to help reduce BOM cost and PCB board space for system implementation.

LX5506E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506E an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications.