LX5510

DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power...........................................................................................15dBm
Maximum Junction Temperature (TJ max) .................................................. 150°C
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-60°C to +150°C

The LX5512B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a threestage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching.

The LX5512B is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process MOCVD). It operates at a single low voltage supply of 3.3V with 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current.

The LX5512B is available in a 16- pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of LX5512B meets the requirements of high-gain power amplifiers for IEEE 802.11b/g applications.