Features: • Fast Access Time 12, 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 25mA(Max.) m(CMOS) : 8mA(Max.) Operating KM641003A - 12 : 150mA(Max.) KM641003A - 15 : 145mA(Max.) KM641003A - 20 : 140mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs and Ou...
KM641003A: Features: • Fast Access Time 12, 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 25mA(Max.) m(CMOS) : 8mA(Max.) Operating KM641003A - 12 : 150mA(Max.) KM641003A - 15 : 145mA(Max.) ...
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PARAMETER | SYMBOL | RATING | Unit |
Voltage on Any Pin Relative to Vss | VIN,OUT | -0.5 to 7.0 | V |
Voltage on Vcc Supply Relative to Vss | VCC | -0.5 to 7.0 | V |
Power Dissipation | PD | 1.0 | W |
Storage Temperature | TSTG | -65 to 150 | |
Operating Temperature | TA | 0 to 70 |
The KM641003A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM641003A is packaged in a 400 mil 32-pin plastic SOJ.