Features: · Fast Access Time 15, 20ns(Max.)· Low Power Dissipation Standby (TTL): 25mA(Max.) (CMOS):8mA(Max.) Operating KM641001A - 15 : 125mA(Max.) KM641001A - 20 :120mA(Max.)· Single 5.0V±10% Power Supply· TTL Compatible Inputs and Outputs· I/O Compatible with 3.3V Device· Fully Static Operation...
KM641001A: Features: · Fast Access Time 15, 20ns(Max.)· Low Power Dissipation Standby (TTL): 25mA(Max.) (CMOS):8mA(Max.) Operating KM641001A - 15 : 125mA(Max.) KM641001A - 20 :120mA(Max.)· Single 5.0V±10% Powe...
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Parameter |
Symbol |
Rating |
Unit |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 7.0 |
V |
Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 7.0 |
V |
Power Dissipation |
PD |
1.0 |
W |
Storage Temperature |
TSTG |
-65 to 150 |
|
Operating Temperature |
TA |
0 to 70 |
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641001A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM641001A is packaged in a 400 mil 28-pin plastic SOJ.