Features: • Fast Access Time 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 5mA(Max.) 1mA(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120mA(Max.) KM641001B/BL - 20 : 118mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs and Outputs...
KM641001B: Features: • Fast Access Time 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 5mA(Max.) 1mA(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120mA(Max.) KM641001B/...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Rating | Unit |
Voltage on Any Pin Relative to VSS | VIN, VOUT | -0.5 to 7.0 | V |
Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 7.0 | V |
Power Dissipation | PD | 1.0 | W |
Storage Temperature | TSTG | -65 to 150 | |
Operating Temperature | TA | 0 to 70 |
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The KM641001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641001B/BL uses 4 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM641001B/BL is packaged in a 400 mil 28-pin plastic SOJ.