KDB2670 Selling Leads, Price trend, KDB2670 DataSheet download, circuit diagram from SeekIC.com

Features: 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 VLow gate charge (27 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilitySpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS ...

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SeekIC No. : 004384963 Detail

KDB2670: Features: 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 VLow gate charge (27 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capa...

KDB2670 Data Sheet

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Part Number:: KDB2670
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/24

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Recent History
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KDB2532 evaluate
Features: ·rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A·Qg(tot) = 82nC (Typ.), VGS = 10V·Low Miller C...
KDB2552 evaluate
Features: `rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A`Qg(tot) = 39nC (Typ.), VGS = 10V`Low Miller C...
KDB2570 evaluate
Features: 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 VLow gate chargeFast s...

Product Details

Description

Features:

19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability

Specifications

Parameter	Symbol	Rating	Unit
Drain to source voltage	V_DSS	200	V
Gate to source voltage	V_GSS	±20	V
Drain current-Continuous	I_D	19	A
Drain current-Pulsed	I_DP	40	A
Power dissipation Derate above 25	P_D	93 0.63	W W/
Peak Diode Recovery dv/dt	dv/dt	3.2	V/ns
Thermal Resistance Junction to Ambient	R_JC	62.5	/W
Thermal Resistance, Junction-to-Case	R_JC	1.6	/W
Channel temperature	T_ch	150
Storage temperature	T_stg	-55 to +150

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KDB2670

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