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KDB2670

Features: 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 VLow gate charge (27 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capabilitySpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS ...

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SeekIC No. : 004384963 Detail

KDB2670: Features: 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 VLow gate charge (27 nC typical)Fast switching speedHigh performance trench technology for extremely low RDS(ON)High power and current handling capa...

KDB2670 Data Sheet

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Part Number:
KDB2670
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability


Specifications

Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
200
V
Gate to source voltage
VGSS
±20
V
Drain current-Continuous
ID
19
A
Drain current-Pulsed
IDP
40
A
Power dissipation
Derate above 25
PD
93
0.63
W
W/
Peak Diode Recovery dv/dt
dv/dt
3.2
V/ns
Thermal Resistance Junction to Ambient
RJC
62.5
/W
Thermal Resistance, Junction-to-Case
RJC
1.6
/W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150



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